DDR5 RAM is Coming

Earlier this year, Industry Leader in Advanced Memory Technology Samsung announced Industry’s first ever DDR5 512 GB Memory Module. This Chip is based on the High-K metal Gate (HKMG) process technology. With the use of HKMG Samsung has reduced the leakage current due to scaling down of DRAM Structure in DDR4.

Due to the Improvements, this new chip is 13% power efficient and provides high performance of up to 7200 Mbps, and leverages the Through-Silicon Via (TSV) Technology by stacking 8 layers of 16 GB DRAM chips to offer a 512 GB capacity. The power efficiency makes it critical for use in the Cloud Data Centres and the high performance makes it very suitable for use in AI, ML, High-Performance Computing to all other data-intensive workloads such as Autonomous driving and Medical Research.